Abstract
The phase-shifted DFB laser is fabricated by the electronbeam lithography and mass-transport technique. The reduction of threshold current and facet reflectivity was achieved by a one-step mass-transport process. Low threshold and stable single-mode operation was obtained. The effect of the phase shift was confirmed from the symmetrical subthreshold spectra.
Original language | English |
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Pages (from-to) | 525-527 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 21 |
Issue number | 12 |
DOIs | |
Publication status | Published - 6 Jun 1985 |
Externally published | Yes |
Keywords
- Lasers and laser applications
- Semiconductor lasers