Analysis of thin layer optical properties of A-Si:H P-Type doping CH₄ and P-Type without CH₄ is deposited PECVD systems

The study of a thin layer growth of hydrogenated amorphous silicon (a-Si: H) using the technique of plasma enhancing chemical vapor deposition (PECVD) has been conducted. Material a-Si: H is one type of materials that is applied as solar cells. In this study, a thin layer of a-Si: H grown on glass substrates by using CH₄ and without CH₄. Most sources Si gas were used in silane gas (SiH₄) 20% dissolved in hydrogen gas (H₂). The addition of CH₄ gas greatly affects the structure of layer morphology and energy gap in thin layers. Based on the results of characterization using AFM, it was obtained a layer thickness which was added by CH₄ 100 nm and layer thickness of 45 nm without CH₄. While the optical energy band gap were conducted, based on the data from characterization using UV-Vis in the wavelength range of 400-800 nm, it was obtained layer optical energy band gap added by CH₄ that was 1,95 eV and layer without CH₄ that was 1.89 eV.