TY - JOUR
T1 - Annealing treatment of a-Si:H films deposited by PECVD and their properties
AU - Cahyono, Yoyok
AU - Darul Muttaqin, Fuad
AU - Maslakah, Umi
AU - Darminto,
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2017/5/20
Y1 - 2017/5/20
N2 - The hydrogenated amorphour silicon (a-Si:H) films have been grown on the glass substrates by plasma enhanced chemical vapor deposition (PE-CVD) employing silane (SiH4) with hydrogen (H2) dilution. The as - deposited films were then annealed at various temperatures of 200, 300 and 400°C for 30 minutes. Annealing process at 300°C was also performed for 60 and 90 minutes. Examinations using X-ray diffractometry, infrared and UV-Vis spectroscopy demonstrated that the annealed films show an increasing crystalinity of 3.26 - 6.80% and reduced dangling bond content down to more than one order of magnitude (from 2.3 × 1019 to 1.2 × 1018 cm-3). Meanwhile, the energy bandgap and Urbach energy of the films are around 1.71 - 1.75 eV and 0.21 - 0.27 eV respectively.
AB - The hydrogenated amorphour silicon (a-Si:H) films have been grown on the glass substrates by plasma enhanced chemical vapor deposition (PE-CVD) employing silane (SiH4) with hydrogen (H2) dilution. The as - deposited films were then annealed at various temperatures of 200, 300 and 400°C for 30 minutes. Annealing process at 300°C was also performed for 60 and 90 minutes. Examinations using X-ray diffractometry, infrared and UV-Vis spectroscopy demonstrated that the annealed films show an increasing crystalinity of 3.26 - 6.80% and reduced dangling bond content down to more than one order of magnitude (from 2.3 × 1019 to 1.2 × 1018 cm-3). Meanwhile, the energy bandgap and Urbach energy of the films are around 1.71 - 1.75 eV and 0.21 - 0.27 eV respectively.
UR - http://www.scopus.com/inward/record.url?scp=85019663307&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/196/1/012038
DO - 10.1088/1757-899X/196/1/012038
M3 - Conference article
AN - SCOPUS:85019663307
SN - 1757-8981
VL - 196
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012038
T2 - 3rd International Conference on Functional Materials Science 2016, ICFMS 2016
Y2 - 19 October 2016 through 20 October 2016
ER -