Birefringence control in silicon wire waveguide by using over-etch

Ika Puspita*, A. M. Hatta

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon wire waveguide technology becomes great issue in optical communication system. The high index contrast of the silicon wire waveguide induced the birefringence. It played important role in silicon wire waveguide loss since it caused polarization dependent loss (PDL), polarization mode dispersion (PMD) and wavelength shifting. Hence, controlling birefringence in silicon wire waveguide become very important. The current birefringence controlling techniques by using cladding stress and geometrical variation in bulk silicon waveguide was presented. Unfortunately, it could not obtain zero birefringence when applied to silicon wire waveguide. The over-etching technique was employed in this paper to obtain zero birefringence. The tall silicon wire waveguide obtained minimum birefringence.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalIndonesian Journal of Electrical Engineering and Informatics
Volume5
Issue number2
DOIs
Publication statusPublished - Jun 2017

Keywords

  • Birefringence control
  • Over-etching
  • Silicon wire waveguide

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