TY - JOUR
T1 - DC reactive sputter deposition of CuO thin films at different operating pressures
AU - Sangwaranatee, N. W.
AU - Sangwaranatee, N.
AU - Horprathum, M.
AU - Chananonnawathorn, C.
AU - Muntini, M.
N1 - Publisher Copyright:
© 2018 Elsevier Ltd. All rights reserved.
PY - 2018
Y1 - 2018
N2 - Copper oxide (CuO) thin films were prepared on glass slide and silicon wafer substrates using dc reactive magnetron sputtering at different operating pressure. The high purity Cu target was used, and sputtering was carried out in argon and oxygen atmosphere. The operating pressure was varied from 10 to 40 mTorr. The physical microstructure and optical properties were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and spectrophotometer. For the crystal structure, the XRD results indicated that the prepared CuO thin films were polycrystalline with monoclinic structure. The FE-SEM results demonstrated the increased of the dense pack structure for the films deposited at low operating pressure. The average optical transmittance at visible region of the film was about ∼50%.
AB - Copper oxide (CuO) thin films were prepared on glass slide and silicon wafer substrates using dc reactive magnetron sputtering at different operating pressure. The high purity Cu target was used, and sputtering was carried out in argon and oxygen atmosphere. The operating pressure was varied from 10 to 40 mTorr. The physical microstructure and optical properties were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and spectrophotometer. For the crystal structure, the XRD results indicated that the prepared CuO thin films were polycrystalline with monoclinic structure. The FE-SEM results demonstrated the increased of the dense pack structure for the films deposited at low operating pressure. The average optical transmittance at visible region of the film was about ∼50%.
KW - Copper oxide
KW - DC sputtering
KW - Morphology
KW - Operating pressure
UR - http://www.scopus.com/inward/record.url?scp=85062691355&partnerID=8YFLogxK
U2 - 10.1016/j.matpr.2018.04.076
DO - 10.1016/j.matpr.2018.04.076
M3 - Conference article
AN - SCOPUS:85062691355
SN - 2214-7853
VL - 5
SP - 15166
EP - 15169
JO - Materials Today: Proceedings
JF - Materials Today: Proceedings
IS - 7
T2 - 3rd International Conference on Applied Physics and Materials Applications, ICAPMA 2017
Y2 - 31 May 2017 through 2 June 2017
ER -