Defect analysis of Y3+-doped Ba0.95Sr0.05Ti1-xO3-δ above Curie temperature

S. Suasmoro*, E. Hastuti, D. Darminto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Several possible defect structures in Ba0.95Sr0.05TiO3-doped with 0, 0.2, 0.4 and 0.6% molar of Y3+ have been analyzed. Polycrystalline samples used in this study were synthesized via an oxalate coprecipitation technique, subsequently followed by calcination at 700 °C for 2 h and sintering at 1300 °C for 2 h. Structural and microstructural characterizations using XRD and SEM show a slight decrease of lattice tetragonality (c/a) and densification with increasing Y3+ content up to 0.4%. Electrical measurements were conducted by applying an alternating electric field of 15 V/cm with the frequency range between 50 Hz and 1 MHz at elevated temperature from room temperature up to 300 °C in air. We have noted three phenomena with respect to the characteristics of dielectric constant exhibited by the samples, namely a structural transition from tetragonal to cubic at Curie temperature, the high frequency as well as low frequency relaxation processes occurring respectively at T ≈ 180 °C and T ≈ 250 °C. Further analysis by the Cole-Cole plot of dielectric constant and complex impedance has suggested the main cause of the related features to be pair defects as VTi″″ - VO {radical dot} {radical dot}and VBa - VO {radical dot} {radical dot}.

Original languageEnglish
Pages (from-to)315-320
Number of pages6
JournalCeramics International
Issue number1
Publication statusPublished - Jan 2009


  • B. Defects
  • C. Conductivity
  • C. Dielectric
  • C. Ferroelectric
  • C. Impedance
  • Oxygen diffusion


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