Abstract
Several possible defect structures in Ba0.95Sr0.05TiO3-doped with 0, 0.2, 0.4 and 0.6% molar of Y3+ have been analyzed. Polycrystalline samples used in this study were synthesized via an oxalate coprecipitation technique, subsequently followed by calcination at 700 °C for 2 h and sintering at 1300 °C for 2 h. Structural and microstructural characterizations using XRD and SEM show a slight decrease of lattice tetragonality (c/a) and densification with increasing Y3+ content up to 0.4%. Electrical measurements were conducted by applying an alternating electric field of 15 V/cm with the frequency range between 50 Hz and 1 MHz at elevated temperature from room temperature up to 300 °C in air. We have noted three phenomena with respect to the characteristics of dielectric constant exhibited by the samples, namely a structural transition from tetragonal to cubic at Curie temperature, the high frequency as well as low frequency relaxation processes occurring respectively at T ≈ 180 °C and T ≈ 250 °C. Further analysis by the Cole-Cole plot of dielectric constant and complex impedance has suggested the main cause of the related features to be pair defects as VTi″″ - VO {radical dot} {radical dot}and V″Ba - VO {radical dot} {radical dot}.
| Original language | English |
|---|---|
| Pages (from-to) | 315-320 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2009 |
Keywords
- B. Defects
- C. Conductivity
- C. Dielectric
- C. Ferroelectric
- C. Impedance
- Oxygen diffusion
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