Effect of Atomic Vacancy Defect in h - BN Monolayer on Electronic Properties: A DFT Study

h-BN is a 2D material which also has considerable development potential in several fields. 2D materials such as h-BN are basically insulating materials but have unique properties and it would be good if they could be developed, especially to meet future energy needs or in the development of electronic devices. Therefore, the properties of h-BN are certainly needed to support this, one of which is the magnetic properties of h-BN. In this research, we modified the h-BN structure by providing defects in the form of vacancy defects by removing atoms in the h-BN layer. We modeled a monolayer h-BN with a supercell size of 4 x 4 x 1, and our calculations were carried out with Quantum ESPRESSO, which is based on density functional theory. The results we obtained showed the emergence of magnetic moment values in h-BN due to defects in the form of atomic vacancies. Furthermore, this research successfully illustrates how vacancy defects in h-BN can modify the band structure, leading to changes in electron behavior around the Fermi energy level.