Electronic Properties of Rare-Earth Doped α-GaN

Muhammad Widianto, Acep Purqon

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We carry out DFT calculation to study electronic properties of rare-earth (RE) doped α-GaN. GGA approximation and ultrasoft pseudopotential used in this calculation. The bond length and tetrahedral angle of pristine α-GaN are slightly changed. The direct band gap of α-GaN was detected at 2.56 eV, this is 1 eV lower from experiment. Electronic structure measurement is also performed for RE doped GaN (RE = Pr, Eu, Er, Gd and Tm), which the configuration is Ga(1-x)NREx (x=0.125). The bond length of Ga-RE is vary from 2.12-2.23 Å. The impurity energy is found relative between conduction bands and valence bands of host materials.

Original languageEnglish
Article number012027
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 10 Aug 2017
Externally publishedYes
Event1st International Conference on Energy Sciences, ICES 2016 - Bandung, Indonesia
Duration: 25 Jul 201627 Jul 2016


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