Fabrication of solar cells based on a-Si: H layer of intrinsic double (P-i _x-i _y-N) with PECVD and Efficiency analysis

The main idea of this research is to fabricate solar cells by doubling the intrinsic layer (P-i x -i y -N) a-Si:H by using PECVD. Double solar cell intrinsic layer (P-i x -i y -N) a-Si:H grown on glass substrates Indium Tin Oxide (ITO). To get double the intrinsic layer made with silane plasma dilution by hydrogen, with a ratio of hydrogen and silane, R = H2/SiH4 varied, while the extrinsic layer of n-type and n-type made constant for each sample. Then on the sample in the metal layer on the rear that act as electrical contacts and reflector light. Next on each sample were characterized or tuned physical properties, namely morphology thickness, optical properties are bandgap, the nature of electric namely electrical conductivity and characterization I-V solar cell layer of intrinsic double (P-ix-iy-N) a-Si: H with a sun simulator and sunlight. From the measurement of electrical conductivity of each sample seen that, fotorespon (σph/σpd) extrinsic layer which is the ratio of the light conductivity to the dark conductivity showed a value of not more than 101, while fotorespon (σph/σpd) layer can intrinsik reaches 105. Based on the characterization of I-V solar cell doubles the intrinsic layer (P-i x -i y -N) a-Si: H obtained in this study, resulting in really good conversion efficiency (8.48%).