TY - GEN
T1 - Ferroelectric properties of Ba2Bi4Ti 5O18 doped with Pb2+, Al3+, Ga 3+, In3+, Ta5+ aurivillius phases
AU - Rosyidah, A.
AU - Onggo, D.
AU - Khairurrijal,
AU - Ismunandar,
PY - 2008
Y1 - 2008
N2 - In recent years, bismuth layer structured ferroelectrics (BLSFs) have been given much attention because some materials, such as Ba2Bi 4Ti5O18, are excellent candidate materials for nonvolatile ferroelectric random access memory (FRAM) applications. BLSFs are also better candidates because of their higher Curie points. Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb 2+, Al3+, Ga3+, In3+, Ta 5+) in the Aurivillius structure of Ba2Bi 4Ti5O18. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of B2cb. The cell parameters for Ba2Bi4Ti5O 18 doped with Pb2+, Al3+, Ga3+, In3+, Ta5+ were a=5.5006(6) b=5.4990(5) c=50.5440(7)Å; a=5.5012(4) b=5.4986(8) c=50.5449(7)Å; a=5.5006(3) b=5.4999(3) c=50.5437(9)Å; a=5.5007(4) b=5.4989(7) c=50.5446(6)Å; and a=5.5000(5) b=5.4995(8) c=50.5436(6)Å. Results from the ferroelectric properties measurement for Ba2Bi4Ti5O 18 doped with Pb2+, Al3+, Ga3+, In3+, Ta5+ were Pr=16.7μC/cm2, Ec=35.1kV/cm; Pr=15.9μC/cm2, E c=33.8kV/cm; Pr=15.6μC/cm2, E c=34.2kV/cm; Pr=15.3μC/cm2, E c=34.0kV/cm; Pr=16.9μC/cm2, E c=35.6kV/cm.
AB - In recent years, bismuth layer structured ferroelectrics (BLSFs) have been given much attention because some materials, such as Ba2Bi 4Ti5O18, are excellent candidate materials for nonvolatile ferroelectric random access memory (FRAM) applications. BLSFs are also better candidates because of their higher Curie points. Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb 2+, Al3+, Ga3+, In3+, Ta 5+) in the Aurivillius structure of Ba2Bi 4Ti5O18. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of B2cb. The cell parameters for Ba2Bi4Ti5O 18 doped with Pb2+, Al3+, Ga3+, In3+, Ta5+ were a=5.5006(6) b=5.4990(5) c=50.5440(7)Å; a=5.5012(4) b=5.4986(8) c=50.5449(7)Å; a=5.5006(3) b=5.4999(3) c=50.5437(9)Å; a=5.5007(4) b=5.4989(7) c=50.5446(6)Å; and a=5.5000(5) b=5.4995(8) c=50.5436(6)Å. Results from the ferroelectric properties measurement for Ba2Bi4Ti5O 18 doped with Pb2+, Al3+, Ga3+, In3+, Ta5+ were Pr=16.7μC/cm2, Ec=35.1kV/cm; Pr=15.9μC/cm2, E c=33.8kV/cm; Pr=15.6μC/cm2, E c=34.2kV/cm; Pr=15.3μC/cm2, E c=34.0kV/cm; Pr=16.9μC/cm2, E c=35.6kV/cm.
KW - Aurivillius phase
KW - Ba BiTiO
KW - Ferroelectric properties
KW - Rietveld refinement
UR - http://www.scopus.com/inward/record.url?scp=42449154685&partnerID=8YFLogxK
U2 - 10.1063/1.2906041
DO - 10.1063/1.2906041
M3 - Conference contribution
AN - SCOPUS:42449154685
SN - 9780735405080
T3 - AIP Conference Proceedings
SP - 117
EP - 121
BT - Neutron and X-Ray Scattering in Materials Science and Biology - Proceedings of the International Conference on Neutron and X-Ray Scattering 2007
T2 - International Conference on Neutron and X-ray Scattering 2007, ICNX 2007
Y2 - 23 July 2007 through 31 July 2007
ER -