MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.

Sekartedjo Koentjoro*, Katare Gopalrao Ravikumar, Kazuhiko Shimomura, Kazuhiro Komori, Shigehisa Arai, Yasuharu Suematsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Mass-transport and conventional burying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9. 6 mA was obtained under cw operation for the active layer width of 1 mu m in 1. 5 mu m wavelength region. The maximum light output power and differential quantum efficiency were 10. 6 mw and 17 percent/ facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflector (BIG-DBR) type lasers.

Original languageEnglish
Pages (from-to)920-922
Number of pages3
JournalTransactions of the Institute of Electronics and Communication Engineers of Japan. Section E
VolumeE69
Issue number9
Publication statusPublished - Sept 1986
Externally publishedYes

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