MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.

Sekartedjo Koentjoro; Katare Gopalrao Ravikumar; Kazuhiko Shimomura; Kazuhiro Komori; Shigehisa Arai; Yasuharu Suematsu

MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.

Sekartedjo Koentjoro^*
, Katare Gopalrao Ravikumar
, Kazuhiko Shimomura
, Kazuhiro Komori
, Shigehisa Arai
, Yasuharu Suematsu

^*Corresponding author for this work

Kyoto Institute of Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Mass-transport and conventional burying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9. 6 mA was obtained under cw operation for the active layer width of 1 mu m in 1. 5 mu m wavelength region. The maximum light output power and differential quantum efficiency were 10. 6 mw and 17 percent/ facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflector (BIG-DBR) type lasers.

Original language	English
Pages (from-to)	920-922
Number of pages	3
Journal	Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E
Volume	E69
Issue number	9
Publication status	Published - Sept 1986
Externally published	Yes

Cite this

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title = "MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.",

abstract = "Mass-transport and conventional burying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9. 6 mA was obtained under cw operation for the active layer width of 1 mu m in 1. 5 mu m wavelength region. The maximum light output power and differential quantum efficiency were 10. 6 mw and 17 percent/ facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflector (BIG-DBR) type lasers.",

author = "Sekartedjo Koentjoro and Ravikumar, \{Katare Gopalrao\} and Kazuhiko Shimomura and Kazuhiro Komori and Shigehisa Arai and Yasuharu Suematsu",

year = "1986",

month = sep,

language = "English",

volume = "E69",

pages = "920--922",

journal = "Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E",

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T1 - MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.

AU - Koentjoro, Sekartedjo

AU - Ravikumar, Katare Gopalrao

AU - Shimomura, Kazuhiko

AU - Komori, Kazuhiro

AU - Arai, Shigehisa

AU - Suematsu, Yasuharu

PY - 1986/9

Y1 - 1986/9

N2 - Mass-transport and conventional burying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9. 6 mA was obtained under cw operation for the active layer width of 1 mu m in 1. 5 mu m wavelength region. The maximum light output power and differential quantum efficiency were 10. 6 mw and 17 percent/ facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflector (BIG-DBR) type lasers.

AB - Mass-transport and conventional burying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9. 6 mA was obtained under cw operation for the active layer width of 1 mu m in 1. 5 mu m wavelength region. The maximum light output power and differential quantum efficiency were 10. 6 mw and 17 percent/ facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflector (BIG-DBR) type lasers.

UR - https://www.scopus.com/pages/publications/0022776872

M3 - Article

AN - SCOPUS:0022776872

SN - 0387-236X

VL - E69

SP - 920

EP - 922

JO - Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E

JF - Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E

IS - 9

ER -

MASS TRANSPORT BURIED HETEROSTRUCTURE LASER USING P-InP SUBSTRATE.

Abstract

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