The presence of N-dopant in Reduced Graphene Oxide has contributed to the change of their optical band gap. In this research, this mechanism has been implemented to synthesize nitrogendoped graphenic carbon (NGC) proposed as an n-type semiconducting layer. The graphenic-based carbon (GC) was derived from coconut shells by a green synthesis method. The two sources of nitrogen dopants were prepared from ammonia water (NH4OH) and urea (CH4N2O). Synthesis of NGC was conducted from GC and a particular dopant with a ratio of 1:20 and 1:40 by wet mixing. Then the NGC solution was deposited onto a 1x1 cm2 glass substrate using a nanospray method to form a layer. X-ray diffraction (XRD) of NGC film has indicated an amorphous characteristic of the film. According to Energy Dispersive X-ray (EDX) spectroscopy, the presence of nitrogen as a doping material in the GC was successfully demonstrated. The SEM cross-section image has performed the NGC layer on the substrate. Absorbance analysis from UV-Vis spectroscopy also explains the occurrence of electronic transitions, both in the form of a solution and a layer of NGC material. The further analysis explained that the optical band gap of the NGC material ranged from 1.66 - 1.86 eV, which exhibits the semiconductor characteristic of the NGC material.