@inproceedings{d3c3b93a125f4599874e4510d5bd2123,
title = "Optical transmission of p-type a-si:H thin film deposited by pecvd on ito-coated glass",
abstract = "A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si:H film was 150 nm. The transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed-scale around the related band gap area that one may find an exciton structure.",
keywords = "Energy gap, Exciton, Optical transmission, P-type a-Si:H",
author = "Soni Prayogi and Baqiya, {Malik A.} and Yoyok Cahyono and Darminto",
note = "Publisher Copyright: {\textcopyright} 2019 Trans Tech Publications Ltd, Switzerland.; 4th International Conference on Functional Materials Science, ICFMS 2018 ; Conference date: 13-11-2018 Through 15-11-2018",
year = "2019",
doi = "10.4028/www.scientific.net/MSF.966.72",
language = "English",
isbn = "9783035714968",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "72--76",
editor = "Darminto and Budhy Kurniawan and Risdiana and Isao Watanabe and Nugroho, {Agustinus Agung}",
booktitle = "Functional Properties of Modern Materials II",
}