Optical transmission of p-type a-si:H thin film deposited by pecvd on ito-coated glass

Soni Prayogi, Malik A. Baqiya, Yoyok Cahyono, Darminto*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si:H film was 150 nm. The transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed-scale around the related band gap area that one may find an exciton structure.

Original languageEnglish
Title of host publicationFunctional Properties of Modern Materials II
Editors Darminto, Budhy Kurniawan, Risdiana, Isao Watanabe, Agustinus Agung Nugroho
PublisherTrans Tech Publications Ltd
Pages72-76
Number of pages5
ISBN (Print)9783035714968
DOIs
Publication statusPublished - 2019
Event4th International Conference on Functional Materials Science, ICFMS 2018 - Bali, Indonesia
Duration: 13 Nov 201815 Nov 2018

Publication series

NameMaterials Science Forum
Volume966 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference4th International Conference on Functional Materials Science, ICFMS 2018
Country/TerritoryIndonesia
CityBali
Period13/11/1815/11/18

Keywords

  • Energy gap
  • Exciton
  • Optical transmission
  • P-type a-Si:H

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