Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD

Yoyok Cahyono; Eddy Yahya; Mochamad Zainuri; Suminar Pratapa

doi:10.1007/s42341-018-0002-3

Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD

Yoyok Cahyono^*, Eddy Yahya, Mochamad Zainuri, Suminar Pratapa, Darminto

^*Corresponding author for this work

Institut Teknologi Sepuluh Nopember

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Intrinsic hydrogenated amorphous silicon (i-a-Si:H) films were successfully grown on commercial glass substrate by plasma enhanced chemical vapor deposition (PECVD), using various hydrogen dilutions (R = H₂/SiH₄). Deposition was carried out at a substrate temperature of 270 °C, using radiofrequency power of 5 W, and chamber pressure of 2 Torr. The decreasing rate of deposition reduced defects in thin film, attributed to the decreased Urbach energy. The reduced particle size led to increased energy bandgap, inducing shift in transmittance to shorter wavelength (blue shift).

Original language	English
Pages (from-to)	69-73
Number of pages	5
Journal	Transactions on Electrical and Electronic Materials
Volume	19
Issue number	1
DOIs	https://doi.org/10.1007/s42341-018-0002-3
Publication status	Published - 1 Feb 2018

Keywords

Bandgap
Hydrogen dilution
Intrinsic a-Si:H
PECVD
Soda lime glass substrate

Access to Document

10.1007/s42341-018-0002-3

Cite this

@article{5a9e223b88ff4563a559ebacb51f1653,

title = "Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD",

abstract = "Intrinsic hydrogenated amorphous silicon (i-a-Si:H) films were successfully grown on commercial glass substrate by plasma enhanced chemical vapor deposition (PECVD), using various hydrogen dilutions (R = H2/SiH4). Deposition was carried out at a substrate temperature of 270 °C, using radiofrequency power of 5 W, and chamber pressure of 2 Torr. The decreasing rate of deposition reduced defects in thin film, attributed to the decreased Urbach energy. The reduced particle size led to increased energy bandgap, inducing shift in transmittance to shorter wavelength (blue shift).",

keywords = "Bandgap, Hydrogen dilution, Intrinsic a-Si:H, PECVD, Soda lime glass substrate",

author = "Yoyok Cahyono and Eddy Yahya and Mochamad Zainuri and Suminar Pratapa and Darminto",

note = "Publisher Copyright: {\textcopyright} 2018, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2018",

month = feb,

day = "1",

doi = "10.1007/s42341-018-0002-3",

language = "English",

volume = "19",

pages = "69--73",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "1",

}

TY - JOUR

T1 - Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD

AU - Cahyono, Yoyok

AU - Yahya, Eddy

AU - Zainuri, Mochamad

AU - Pratapa, Suminar

AU - Darminto,

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Intrinsic hydrogenated amorphous silicon (i-a-Si:H) films were successfully grown on commercial glass substrate by plasma enhanced chemical vapor deposition (PECVD), using various hydrogen dilutions (R = H2/SiH4). Deposition was carried out at a substrate temperature of 270 °C, using radiofrequency power of 5 W, and chamber pressure of 2 Torr. The decreasing rate of deposition reduced defects in thin film, attributed to the decreased Urbach energy. The reduced particle size led to increased energy bandgap, inducing shift in transmittance to shorter wavelength (blue shift).

AB - Intrinsic hydrogenated amorphous silicon (i-a-Si:H) films were successfully grown on commercial glass substrate by plasma enhanced chemical vapor deposition (PECVD), using various hydrogen dilutions (R = H2/SiH4). Deposition was carried out at a substrate temperature of 270 °C, using radiofrequency power of 5 W, and chamber pressure of 2 Torr. The decreasing rate of deposition reduced defects in thin film, attributed to the decreased Urbach energy. The reduced particle size led to increased energy bandgap, inducing shift in transmittance to shorter wavelength (blue shift).

KW - Bandgap

KW - Hydrogen dilution

KW - Intrinsic a-Si:H

KW - PECVD

KW - Soda lime glass substrate

UR - http://www.scopus.com/inward/record.url?scp=85046396161&partnerID=8YFLogxK

U2 - 10.1007/s42341-018-0002-3

DO - 10.1007/s42341-018-0002-3

M3 - Article

AN - SCOPUS:85046396161

SN - 1229-7607

VL - 19

SP - 69

EP - 73

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 1

ER -

Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this