5 Citations (Scopus)


Intrinsic hydrogenated amorphous silicon (i-a-Si:H) films were successfully grown on commercial glass substrate by plasma enhanced chemical vapor deposition (PECVD), using various hydrogen dilutions (R = H2/SiH4). Deposition was carried out at a substrate temperature of 270 °C, using radiofrequency power of 5 W, and chamber pressure of 2 Torr. The decreasing rate of deposition reduced defects in thin film, attributed to the decreased Urbach energy. The reduced particle size led to increased energy bandgap, inducing shift in transmittance to shorter wavelength (blue shift).

Original languageEnglish
Pages (from-to)69-73
Number of pages5
JournalTransactions on Electrical and Electronic Materials
Issue number1
Publication statusPublished - 1 Feb 2018


  • Bandgap
  • Hydrogen dilution
  • Intrinsic a-Si:H
  • Soda lime glass substrate


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