@inproceedings{272053b5a4da43e0973c949a9d249a84,
title = "Reduced energy bandgap of a-Si:H films deposited by PECVD at elevating temperatures",
abstract = "The hydrogenated amorphous silicon (a-Si:H) films with the thickness of several hundreds nanometer have successfully been grown on the glass substrates by plasma enhanced (PE) chemical vapor deposition (CVD), employing SiH4 gas with H2 dilution. The deposition temperatures being set from 150°C up to 250°C was intended to induce nanocrystalline clusters in the amorphous structure, to reduce dangling bond and to recover defect states in the gap, in order to obtain films with reduced energy band gap. The X-ray diffractometry, UV-Vis spectrometric and atomic force microscopic examinations were conducted to structurally study the samples. The reduction of energy bandgap from 1.89 eV down to 1.03 eV was obtained from the deposited films.",
author = "Yoyok Cahyono and Umi Maslakah and Muttaqin, {Fuad Darul} and Darminto",
note = "Publisher Copyright: {\textcopyright} 2017 Author(s).; 6th International Conference on Theoretical and Applied Physics, ICTAP 2016 ; Conference date: 19-09-2016 Through 21-09-2016",
year = "2017",
month = jan,
day = "10",
doi = "10.1063/1.4973086",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Nur Hasanah and Tasrief Surungan and Dahlang Tahir and Halmar Halide",
booktitle = "6th International Conference on Theoretical and Applied Physics, 6th ICTAP",
}