Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma

Nobuki Kashihara, Heru Setyawan, Manabu Shimada*, Yutaka Hayashi, Chan Soo Kim, Kikuo Okuyama, Sugeng Winardi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O2. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination.

Original languageEnglish
Pages (from-to)395-403
Number of pages9
JournalJournal of Nanoparticle Research
Volume8
Issue number3-4
DOIs
Publication statusPublished - Aug 2006

Keywords

  • Nanoparticle
  • Particle generation control
  • Plasma reactor
  • Sine-wave modulation

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