TY - JOUR
T1 - Voltage Driving Yellow Electroluminescence from β-CaSiO3:Mn2+in Silicon Photonics
AU - Afandi, Mohammad M.
AU - Byeon, Sanghun
AU - Fandiantoro, Dion Hayu
AU - Kim, Jongsu
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Silicate-based optical functional materials have garnered significant attention owing to their exceptional luminescence properties, chemical and thermal stability, and cost-effectiveness. Herein, a yellow-emitting electroluminescent device based on an alkaline metasilicate has been introduced. The device follows the metal-oxide-semiconductor structure, comprising multi-dielectric layers sandwiching the Mn2+-doped β-CaSiO3 optical functional layer in a silicon substrate. Under voltage driving, the device emits a yellow spectrum on a large scale with an emission center at 555 nm, which is optically attributed to the d-d transitions of Mn2+ ions occupied in the host lattice. Importantly, the multi-dielectric layer in this structure plays a crucial role in preventing the leakage current and simultaneously improving efficiency. Accordingly, this approach holds promise for the future development of advanced large-scale emitting devices in silicon photonics.
AB - Silicate-based optical functional materials have garnered significant attention owing to their exceptional luminescence properties, chemical and thermal stability, and cost-effectiveness. Herein, a yellow-emitting electroluminescent device based on an alkaline metasilicate has been introduced. The device follows the metal-oxide-semiconductor structure, comprising multi-dielectric layers sandwiching the Mn2+-doped β-CaSiO3 optical functional layer in a silicon substrate. Under voltage driving, the device emits a yellow spectrum on a large scale with an emission center at 555 nm, which is optically attributed to the d-d transitions of Mn2+ ions occupied in the host lattice. Importantly, the multi-dielectric layer in this structure plays a crucial role in preventing the leakage current and simultaneously improving efficiency. Accordingly, this approach holds promise for the future development of advanced large-scale emitting devices in silicon photonics.
KW - electroluminescence (EL)
KW - manganese ions
KW - silicon-photonic.
KW - β-CaSiO
UR - http://www.scopus.com/inward/record.url?scp=85178075799&partnerID=8YFLogxK
U2 - 10.1109/LED.2023.3334282
DO - 10.1109/LED.2023.3334282
M3 - Article
AN - SCOPUS:85178075799
SN - 0741-3106
VL - 45
SP - 72
EP - 75
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 1
ER -